SiC vs GaN Transistors
Silicon carbide (SiC) is used in electric vehicles due to its wide bandgap and great thermal conductivity. Gallium nitride (GaN) shares many characteristics with SiC while also minimizing RF noise.
Tag transistors
Through-Silicon Via: Interconnecting Chip Layers
Built directly into the silicon, through silicon vias (TSV) facilitate 3D IC integration and allow for more compact packaging. They have become the default solution to interconnect different chip layers or to stack chips vertically.
The CFET Transistor: Shrinking Nodes Beyond 2030
The move to CFET vs GAAFET marks a switch from horizontally stacked transistors to vertically stacked ones. This will allow further shrinking of semiconductor patterns and the advancement of Moore´s Law.
Evolution of Metal Pitch in Semiconductor Transistors
The metal pitch refers to the distance between the centers of two adjacent metal interconnect lines on an integrated circuit (IC). Since transistors evolved into 3D strucrures, this measurement has lost significance.
FinFET vs MOSFET (Planar) Transistors in Chip Design
FinFETs are three-dimensional transistors with vertical fins that solve most of the problems related to planar MOSFET, such as leakage current or short channel effects.
GAAFET vs FinFET: “Transistoring” to All-Around Nanosheets
GAAFET vs FinFET marks an advancement in multigate transistors, shifting the conducting channel from vertical fins to nanosheets.