FinFETs are three-dimensional transistors with vertical fins that solve most of the problems related to planar MOSFET, such as leakage current or short channel effects.
The metal pitch refers to the distance between the centers of two adjacent metal interconnect lines on an integrated circuit (IC). Since transistors evolved into 3D strucrures, this measurement has lost significance.
The move to CFET vs GAAFET marks a switch from horizontally stacked transistors to vertically stacked ones. This will allow further shrinking of semiconductor patterns and the advancement of Moore´s Law.
Built directly into the silicon, through silicon vias (TSV) facilitate 3D IC integration and allow for more compact packaging. They have become the default solution to interconnect different chip layers or to stack chips vertically.
Silicon carbide (SiC) is used in electric vehicles due to its wide bandgap and great thermal conductivity. Gallium nitride (GaN) shares many characteristics with SiC while also minimizing RF noise.