Techlevated

Built directly into the silicon, through silicon vias (TSV) facilitate 3D IC integration and allow for more compact packaging. They have become the default solution to interconnect different chip layers or to stack chips vertically.

Silicon carbide (SiC) is used in electric vehicles due to its wide bandgap and great thermal conductivity. Gallium nitride (GaN) shares many characteristics with SiC while also minimizing RF noise.

The move to CFET vs GAAFET marks a switch from horizontally stacked transistors to vertically stacked ones. This will allow further shrinking of semiconductor patterns and the advancement of Moore´s Law.

GAAFET vs FinFET marks an advancement in multigate transistors, shifting the conducting channel from vertical fins to nanosheets.